Online information source for semiconductor professionals
Linde’s new dopant gas range lowers ion implantation costs by 20%
Popular articles
Voltaix names Peter Smith as CEO - 09 November 2011
Sematech Litho Forum: Sematech mulling multi-beam mask writer effort - 12 May 2010
TSMC hosts 2008 Green Forum on ‘green’ factories - 31 October 2008
Oberai discusses Magma’s move into solar PV yield management space - 29 August 2008
TSMC honors suppliers at annual Supply Chain Management Forum - 03 December 2008
Linde North America has launched its new sub-atmospheric dopant gas source for the semiconductor and related industries. The Genii Sub-Atmospheric Gas Sources are used for ion implantation and use chemical complexing or electrochemical generation to deliver a high performance as required by IC manufacturers.
Ion implantation involves the introduction of doping gases such as arsine, phosphine and boron trifluoride, to the silicon substrate. It is claimed (from Beta testing at an IC manufacturer’s site) that the new gas sources can lower ion implant source costs by at least 20%.
The Genii dopant line provides two solutions: one generates arsine at sub-atmospheric pressure from an electrochemical generator located within the cylinder, while the second delivers enriched boron trifluoride or phosphine through chemical complexing with ionic liquids located within the cylinder.
“The Genii Sub-Atmospheric Gas Sources from Linde provide IC manufacturers with a lower cost-of-ownership, high-performance alternative to other sub-atmospheric products currently on the market,” said Peter Thomas, vice president of marketing for Linde’s electronics business.