Online information source for semiconductor professionals
Jazz Semiconductor offering DSV process on 180nm SiGe BiCMOS process
Popular articles
â??Velocityâ?? the new buzzword in Intelâ??s PQS annual awards - 12 April 2012
Oberai discusses Magma’s move into solar PV yield management space - 29 August 2008
New Product: Applied Materials new EUV reticle etch system provides nanometer-level accuracy - 19 September 2011
Applied Materials adds Jim Rogers to Board of Directors - 29 April 2008
TSMC honors suppliers at annual Supply Chain Management Forum - 03 December 2008
Instead of Through Wafer Via, Jazz Semiconductor, a subsidiary of Tower Semiconductor, has developed ‘Deep-Silicon-Via’ (DSV) technology that is now available in its 180nm SiGe BiCMOS process platform. The DSV technology is said to eliminate several thin wafer processing steps common with Through Wafer Vias used to create a low-inductance path for power amplifiers.
“We continue to invest in foundry technology for the front-end module by enabling silicon solutions of components that have traditionally been built in GaAs, helping customers reduce cost and increase integration levels. This new DSV technology is the latest offering in our Silicon Radio Platform that includes SiGe power amplifiers and SOI-based silicon switch technology,” said Dr. Marco Racanelli, Senior Vice President and General Manager, RF and High Performance Analog Business Group, Tower and Jazz Semiconductor.
A paper entitled, “A Deep-Silicon-Via Ground for SiGe Power Amplifiers,” will be presented by the company at the SiRF2010 conference in New Orleans on January 13, 2010.