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Infineon and Nanya carry-on joint DRAM process development

29 September 2005 | By Syanne Olson | News > Wafer Processing

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Infineon Technologies AG and Nanya Technology Corporation are to continue their joint process development program beyond the current agreement that covers 90nm and 70nm production processes.

The new agreement covers 60nm production technologies for 300mm wafers, starting from September 2005, and includes Inotera Memories, according to statement issued today.

"The extension of the successful strategic development partnership with Nanya towards the 60nm technology will pave the way to increase our DRAM manufacturing productivity significantly," explained Kin Wah Loh, Member of the Infineon's Management Board and President of Infineon's Memory Products Business Group. "The cooperation with Nanya proves the efficiency of Infineon's partnership approach and gives us a competitive edge in the highly dynamic DRAM industry."

As before, Infineon's Dresden fab and development centre will be responsible for the new processes with both companies committing more than 100 engineers and researchers to the program. The first 300mm wafer memory products using the new 60nm process is expected to leave the production line in 2008.

"The strategic partnership with Infineon on the 60nm technology will greatly enhance this camp's competitiveness," stated Dr. Jih Lien, President of Nanya Technologies. "Through the technology cooperation, we can mutually benefit from the cost and resource sharing for leading edge R&D."

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