Online information source for semiconductor professionals
IMFT migrates to 34nm NAND flash production
Popular articles
Voltaix names Peter Smith as CEO - 09 November 2011
Sematech Litho Forum: Sematech mulling multi-beam mask writer effort - 12 May 2010
TSMC hosts 2008 Green Forum on ‘green’ factories - 31 October 2008
Oberai discusses Magma’s move into solar PV yield management space - 29 August 2008
TSMC honors suppliers at annual Supply Chain Management Forum - 03 December 2008
IM Flash Technologies (IMFT) has claimed the technology leadership for NAND flash production with the news that its 300mm fab in Lehi, Utah has entered production of its 34nm process technology. The monolithic 32Gb NAND device is said to fit into a standard 48-lead thin small-outline package (TSOP), with the die only 172mm² in size.
“We have made great strides in NAND process capability and are now in a leadership role with 34nm production,” said Brian Shirley, vice president of Micron’s Memory Group. “The tiny 34nm, 32 Gb chip enables our customers to easily increase their NAND storage capacity for a number of consumer and computing products.”
“The results from IMFT continue to exceed our expectations,” said Randy Wilhelm, vice president and general manager, Intel NAND Solutions Group. “With such clear leadership in NAND manufacturing, we are able to offer our customers NAND solutions with great value, performance and low power.”
IMFT expects 50 percent of its capacity at Lehi to be converted to 34nm technology by the end of 2008 and will begin sampling lower density multi-level cell (MLC) and single-level cell (SLC) products using the 34nm process technology in early 2009.