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IMEC to tackle flash memory scaling with RRAM focus

15 October 2008 | By Mark Osborne | News > Wafer Processing

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Resistive switching in an experimental metal oxides (MOx) RRAM elementDuring IMEC’s Annual Research Review Meeting, the R&D facility said it had begun research on resistive RAM (RRAM) cells to tackle the pending scaling challenges of conventional flash memory cells. Research is being focused on stack optimization (including the choice of top and bottom electrode and of the metal oxide), RRAM cell scaling and RRAM integration in a crossbar RRAM array.

IMEC also said it had started work on floating body cells (FBCs) for embedded and stand-alone DRAM and SRAM replacements.

These new research comes under IMEC’s Emerging Memory program that provides non-volatile memory (NVM) technology, concepts and solutions for the 32nm generation and below.

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