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The new volume production technology node for IM Flash Technologies will be at the 25nm node, which will enter production in the second quarter of 2010. The 25nm process produces 8 gigabytes (GB) of storage in a single NAND flash device (167mm2) and is designed to provide an effective product to push solid state drives (SSD) into laptops and other products.

 "To lead the entire semiconductor industry with the most advanced process technology is a phenomenal feat for Intel and Micron, and we look forward to further pushing the scaling limits," said Brian Shirley, Vice President of Micron's Memory Group. "This production technology will enable significant benefits to our customers through higher density media solutions."

"Through our continued investment in IMFT, we're delivering leadership technology and manufacturing that enable the most cost-effective and reliable NAND memory," said Tom Rampone, Vice President and General Manager, Intel NAND Solutions Group. "This will help speed the adoption of solid-state drive solutions for computing."

The joint venture company said that the new device provides the highest-density in a single 2 bits-per-cell multi-level cell (MLC) die that will fit an industry-standard, thin small-outline package (TSOP). Multiple 8GB devices can be stacked in a package to increase storage capacity.

IMFT uses immersion lithography to enable the 25nm feature sizes.