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IBM taps Rohm and Haas for implant and lithography materials development
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Rohm and Haas Electronic Materials and IBM have entered into a joint
development agreement to create patterning materials and processes to
enable implant steps at the 32nm node and beyond.
“Finding the right solutions to difficult technical challenges for the
next-generation nodes depends not only on strong engineering and design
but also close collaboration with leaders in the semiconductor
industry,” said Dr. James Fahey, President of Microelectronic
Technologies for Rohm and Haas Electronic Materials. “Partnering with
IBM will accelerate the development of new materials and ensure that we
are on track to meet the needs for 32 and 22nm nodes.”
“There
are many options for lithography at 32nm and beyond, and this
relationship will help to create solutions for these unique
challenges,” noted George Gomba, Distinguished Engineer and Director of
Total Patterning Solutions for IBM Microelectronics.
The work
will take place at IBM’s East Fishkill, Yorktown and Albany facilities
and at Rohm and Haas Electronic Materials’ Advanced Technology Center
in Marlborough, MA.