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IBM taps Rohm and Haas for implant and lithography materials development

25 February 2008 | By Mark Osborne | News > Lithography

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IBMRohm and Haas Electronic Materials and IBM have entered into a joint development agreement to create patterning materials and processes to enable implant steps at the 32nm node and beyond.

 “Finding the right solutions to difficult technical challenges for the next-generation nodes depends not only on strong engineering and design but also close collaboration with leaders in the semiconductor industry,” said Dr. James Fahey, President of Microelectronic Technologies for Rohm and Haas Electronic Materials. “Partnering with IBM will accelerate the development of new materials and ensure that we are on track to meet the needs for 32 and 22nm nodes.”

“There are many options for lithography at 32nm and beyond, and this relationship will help to create solutions for these unique challenges,” noted George Gomba, Distinguished Engineer and Director of Total Patterning Solutions for IBM Microelectronics.

The work will take place at IBM’s East Fishkill, Yorktown and Albany facilities and at Rohm and Haas Electronic Materials’ Advanced Technology Center in Marlborough, MA.

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