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Hynix to start NAND flash production at M11 fab in September
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Hynix Semiconductor has officially opened its latest 300mm fab, dubbed M11 in Cheongju, Korea. The new 200,000wspm plus facility is Hynix’s largest facility and will be dedicated to NAND flash production starting in September, 2008. Initially, M11 will be ramped to 40,000wspm using Hynix’s 40nm process technology, producing 16Gb and 32Gb flash memory devices.
“Hynix plans to develop Cheongju site as the number one NAND Flash manufacturing facilities in the world starting from this completion of the 3rd Factory construction. Though recovery of the semiconductor industry has been in delay, we will continuously secure competitiveness and growth engine for sustainable growth with our leading-edge technologies and active strategic alliances.” said Mr. Jong-kap Kim, Chairman and CEO of Hynix.
Hynix broke ground on M11 in April, 2007 and had a projected cost of $4.0 billion. The memory manufacturer announced in April 2008, that it would delay the ramp of M11 by one quarter due to the current overcapacity of NAND flash.