Online information source for semiconductor professionals
Hynix delays 300mm fab ramp
Popular articles
New Product: Applied Materials new EUV reticle etch system provides nanometer-level accuracy - 19 September 2011
Oberai discusses Magma’s move into solar PV yield management space - 29 August 2008
â??Velocityâ?? the new buzzword in Intelâ??s PQS annual awards - 12 April 2012
Applied Materials adds Jim Rogers to Board of Directors - 29 April 2008
New Product: ASML Brionâ??s Tachyon MB-SRAF enables OPC-like compute times - 19 September 2011
Following quickly on heels of news that Hynix Semiconductor would cut
capital spending in the second half of 2008 by approximately $1 billion, the Korean memory manufacturer, as reported by Reuters, is to delay the production ramp of its newest 300mm fab, M11 by a quarter. M11 is a NAND flash memory fab.
A Hynix spokeswoman was reported to have said that the expected ramp in
the second quarter would be delayed until the third quarter due to the
current NAND flash market conditions.
Hynix also said that it
was winding down another NAND flash fab in the third quarter, which is
thought to be one of its 200mm fabs, now that they are uneconomical
with regard to NAND flash device production.