A paper presented at the 2009 Symposium on VLSI Technology in Kyoto, Japan by Globalfoundries highlights a new technique that allows the equivalent oxide thickness (EOT) in a high-k metal gate (HKMG) transistor to scale past the 22nm node, yet enables the retention of low leakage, low threshold voltages, and improved carrier mobility characteristics.
It has been well documented in the past that reducing the EOT increases the leakage current, resulting in higher device power consumption. In partnership with IBM, the foundry developed a new technique that overcomes this barrier. The results were successfully demonstrated through fabrication of an n-MOSFET device with EOT of 0.55nm and a p-MOSFET with EOT of 0.7nm.
“HKMG is a critical component of Globalfoundries’ technology roadmap,” said Gregg Bartlett, Senior Vice President of Technology and Research and Development. “This development could eventually provide customers with another tool to enhance the performance of their products, particularly in the fast-growing market for ultra-portable notebooks and smartphones with extended battery life. In conjunction with IBM and the alliance partners, we are tapping our global knowledge base to develop advanced technologies that will allow our customers to stay at the leading edge of semiconductor manufacturing.”