Online information source for semiconductor professionals

Globalfoundries to start 28nm shuttle service in Q1 2010

30 September 2009 | By Mark Osborne | News > Wafer Processing

Popular articles

New Product: Applied Materials new EUV reticle etch system provides nanometer-level accuracy - 19 September 2011

Oberai discusses Magma’s move into solar PV yield management space - 29 August 2008

‚??Velocity‚?? the new buzzword in Intel‚??s PQS annual awards - 12 April 2012

Applied Materials adds Jim Rogers to Board of Directors - 29 April 2008

New Product: ASML Brion‚??s Tachyon MB-SRAF enables OPC-like compute times - 19 September 2011

Touting its ‘Gate First’ High-k Metal Gate (HKMG) process technology as a simpler approach to that of Intel’s, Globalfoundries will start accepting 28nm customer and third party IP designs in Q1, 2010 on its new shuttle service. Actual production is planned for the second half of 2010. The foundry also said that its yield progress at the 32nm node was now in the double-digit levels and on path to 50% natural yields by year-end, using 24Mb SRAMs as reference fabrication devices.

“When compared against the 45nm-SHP technology we’re currently running in Fab 1, we’re seeing performance improvements of up to 50 percent in the 32nm generation at the same leakage levels of the 45nm generation,” said Jim Doran, senior vice president and general manager of Fab 1 at GLOBALFOUNDRIES. “When you combine this with our patented Automated Precision Manufacturing (APM) technology and exceptionally low defect densities, we believe we’ll be in the leading position among foundries to bring this technology to market in volume for our customers.”

Globalfoundries also claimed that its 28nm technology would enable the smallest SRAM cell size (0.120 µm2) currently reported in the foundry industry.

Related articles

Common Platform alliance partners start 32nm HKMG shuttles in 3Q08 - 14 April 2008

TSMC touts gate-last HKMG for 28nm low-power applications - 24 August 2009

Globalfoundries snags largest fabless company - 07 January 2010

TSMC squeezes 28nm node into roadmap for 2010 - 29 September 2008

IBM alliance touts 28nm half-node bulk CMOS process for 2H 2010 - 16 April 2009

Reader comments

No comments yet!

Post your comment

Please enter the word you see in the image below: