Online information source for semiconductor professionals

Fujitsu extends foundry agreement with TSMC to 28nm node

27 August 2009 | By Mark Osborne | News > Wafer Processing

Popular articles

New Product: Applied Materials new EUV reticle etch system provides nanometer-level accuracy - 19 September 2011

Oberai discusses Magma’s move into solar PV yield management space - 29 August 2008

‚??Velocity‚?? the new buzzword in Intel‚??s PQS annual awards - 12 April 2012

Applied Materials adds Jim Rogers to Board of Directors - 29 April 2008

New Product: ASML Brion‚??s Tachyon MB-SRAF enables OPC-like compute times - 19 September 2011

Fujitsu Microelectronics has teamed with TSMC to jointly develop an enhanced 28nm high-performance process for its advanced logic devices which are expected to begin sampling towards the end of 2010. The move extends the partnership from 40nm through to 28nm processing. The companies also said that they were in discussions over collaboration on advanced packaging processes such as Cu/ELK interconnect.

"We are rapidly progressing in our previously-announced collaboration with TSMC on 40nm process technology, with several product designs in progress at present", commented Haruyoshi Yagi, Corporate Senior Vice President of Fujitsu Microelectronics Limited. "With this further agreement with TSMC on 28nm high-performance process technology development and production, we combine both companies' strengths to create greater value for our customers, and will further drive the growth of businesses for TSMC and Fujitsu's ASIC and ASSP core products."

“The agreement today is also a vote of confidence in TSMC's technology platforms that include design related considerations such as design kits, design flows, TSMC and 3rd party IP; robust device related documentation, processes technology excellence and backend assembly and test capabilities," noted Jason Chen, Vice President, Worldwide Sales and Marketing, TSMC. 

Related articles

Fujitsu taps TSMC for advanced process production - 30 April 2009

TSMC touts gate-last HKMG for 28nm low-power applications - 24 August 2009

TSMC squeezes 28nm node into roadmap for 2010 - 29 September 2008

TSMC readies for double patterning at the 20nm node - 26 May 2011

Qualcomm targets 28nm devices by mid-2010 - 01 June 2009

Reader comments

No comments yet!

Post your comment

Please enter the word you see in the image below: