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Fab utilization rates continue to climb at Chartered Semiconductor
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Chartered Semiconductor’s overall fab utilization rates have climbed
from 70 percent in 1Q07 to 86 percent in 1Q08 and are expected to top
88 percent in 2Q08, the company noted in its first quarter 2008
financial results.
The Singapore-based foundry is experiencing strong demand for both 200mm and 300mm capacity.
“Revenues
from 0.13-micron and below technologies, including those from 65nm, are
expected to account for approximately 47 percent of our total business
base revenues,” commented George Thomas, Senior Vice President and CFO
of Chartered. “Revenues from 65nm alone are expected to grow around 33
percent sequentially and represent approximately 11 percent of our
total business base revenues. After comprehending approximately 17
percent sequential increase in capacity, primarily due to the
acquisition of Fab 3E [Hitachi Semiconductor Singapore Pte Ltd], we
expect utilization in the second quarter to be approximately 88
percent. With this outlook, we expect to post a net income of
approximately $6 million for the second quarter.”
Chartered’s
300mm facility, Fab7, continued to ramp throughout 2007 and this could
continue through 2008. The foundry also added several more customers to
300mm production in the quarter, mainly for 65nm processes. It also
took a $190 million term loan facility from Societe Generale to support
the Phase 2 ramp of Fab 7.
