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EUVL Symposium: source, mask defects & resists remain challenges

15 October 2008 | By Mark Osborne | News > Lithography

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EUVL Albany At the seventh EUVL Symposium, organized by SEMATECH, key challenges remain for EUV lithography before volume production adoption at the 22nm half-pitch, according to attendees and an assessment from the research consortium.

A fully integrated laser produced plasma (LPP) source collector module with effective mitigation of tin deposition and ion erosion was demonstrated at the symposium with 3 to 4 W at intermediate focus (IF). Long-term source operation with 100 W at the IF and 5 megajoule per day will be required for production. SEMATECH noted that on the ASML EUV alpha tool, power of discharge produced plasma (DPP) sources had now reached 500W.

The ability to produce and maintain defect-free masks continues to improve, according to SEMATECH, however the industry will require more sensitive defect inspection tools for mask substrates and blanks. In part a commercial EUV aerial imaging tool will be required for patterned mask defect review. Concern was also raised over EUV metrology infrastructure as a whole.

Photoresist sensitivity and Line Edge Roughness (LER) are still proving problematic. However, SEMATECH work has shown that 20 nm resolution images and 30 nm 1:1 contact hole images have been achieved.

SEMATECH remains positive at this time that EUV Lithography will be ready for pilot line insertion in the 2010-2012 timeframe.

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