Online information source for semiconductor professionals
Elpida uses immersion lithography for 50nm DDR3 SDRAM
Popular articles
Sematech Litho Forum: Sematech mulling multi-beam mask writer effort - 12 May 2010
Oberai discusses Magma’s move into solar PV yield management space - 29 August 2008
TSMC hosts 2008 Green Forum on ‘green’ factories - 31 October 2008
TSMC honors suppliers at annual Supply Chain Management Forum - 03 December 2008
Samsung and Micron gain most market share in DRAM crisis - 17 February 2009
Elpida Memory has said that it has used 193nm ArF immersion lithography and copper interconnect technology for the development of its 50nm DDR3 SDRAM semiconductors. Volume production is scheduled to begin in the January-March 2009 quarter, the company said.
The scaled device is claimed to have the lowest power consumption in the industry at 1.2V with a 2.5Gbps ultra high speed and a chip size of 40mm2.