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Elpida to ramp 30nm DRAM in May

28 April 2011 | By Mark Osborne | News > Wafer Processing

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Elpida Memory is on target to start the ramp of 30nm DRAM at its Hiroshima Plant as well as at Taiwan-based Rexchip Electronics Corporation starting in May 2011. Mass production is expected to start with a 30nm 2-gigabit DDR3 SDRAM for PC applications, followed by 4-gigabit DDR2 Mobile RAMTM and 4-gigabit DDR3 SDRAM. Elpida said its 300mm fab would be devoting 20% of its production capacity to the new 30nm process by the second quarter of CY 2011.

Rexchip Electronics will start manufacturing the 30nm process in the third quarter of CY 2011. However, Elpida noted without detailing the number of lines to dedicated to the new process at Rexchip that it expected 50% of the 30nm lines reach capacity in that quarter, and possibly reach 100% in the fourth quarter.

Elpida claimed that its 30nm process yields 45% more chips per wafer than its 40nm products and devices consume at least 20% less power.

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