Online information source for semiconductor professionals
ASML touts 11nm capability for EUV lithography
Popular articles
Micron moving fast on Hynix in Q208 NAND flash rankings, says iSuppli - 19 August 2008
Numonyx to close California Technology Center - 12 August 2008
Qimonda starts major reorganization: exits PC DRAM market - 13 October 2008
Micron close to Inotera share purchase, says Gartner - 06 October 2008
Applied Materials sees higher CapEx spending for 2009 - 15 August 2008
At the 2008 International Symposium on Extreme Ultraviolet Lithography (EUV), ASML expects to present on new developments in EUV lithography that it claims show a production worthiness for the technology down to 11nm. The lithography equipment supplier has dubbed the production tool its 'NXE' series with the design having been completed and evolved from its optical TWINSCAN platform, and has orders for five of these systems from memory and logic customers, the company said.
“EUV lithography remains the most attractive option for extending Moore’s Law,” stated Martin van den Brink, ASML’s Executive Vice President of marketing and technology. “As a single-exposure, multi-node technology, EUV offers the greatest extendibility at the lowest cost of ownership.”
In August 2006 ASML shipped the industry’s first full-field EUV exposure tools. One EUV ADT was installed at IMEC in Leuven, Belgium and another at CNSE in Albany, New York, USA.