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ASML touts 11nm capability for EUV lithography

30 September 2008 | By Mark Osborne | News > Lithography

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ASML EUV ADT at CNSE in AlbanyAt the 2008 International Symposium on Extreme Ultraviolet Lithography (EUV), ASML expects to present on new developments in EUV lithography that it claims show a production worthiness for the technology down to 11nm. The lithography equipment supplier has dubbed the production tool its 'NXE' series with the design having been completed and evolved from its optical TWINSCAN platform, and has orders for five of these systems from memory and logic customers, the company said.

“EUV lithography remains the most attractive option for extending Moore’s Law,” stated Martin van den Brink, ASML’s Executive Vice President of marketing and technology. “As a single-exposure, multi-node technology, EUV offers the greatest extendibility at the lowest cost of ownership.”

In August 2006 ASML shipped the industry’s first full-field EUV exposure tools. One EUV ADT was installed at IMEC in Leuven, Belgium and another at CNSE in Albany, New York, USA.

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