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ASM International and SAFC Hitech team on next generation high-k materials

07 January 2009 | By Mark Osborne | News > Materials and Gases

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Working partners SAFC Hitech and ASM International are developing next-generation high-k materials used in ALD processes in both logic and memory devices. Source materials such as 'cyclopentadienyl' are Strontium- and Barium-based insulators with dielectric constants exceeding 100. A new agreement between the two companies provides certification criteria for the chemical source materials, a license to certain ASM ALD patents to SAFC Hitech and further development of these chemical source materials. The new materials could be required for production of 3x nm nodes for memory devices, beginning around 2011.

"SAFC Hitech has been working closely with ASM's research groups for some time, focusing on evaluation and process development of this class of cyclopentadienyl source materials," added Dr. Peter Heys, Research and Development Director, SAFC Hitech. "This effort has resulted in sources that have demonstrated ALD of high quality, Ultra High-k films. We are now working towards the scale-up for high volume manufacture of both strontium and barium Ultra High-k source precursors. The current target is to have product available in quantities up to and beyond 2011, consistent with ITRS road map requirements and ASM and SAFC Hitech projections."

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