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ASM International and SAFC Hitech team on next generation high-k materials
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Working partners SAFC Hitech and ASM International are developing
next-generation high-k materials used in ALD processes in both logic
and memory devices. Source materials such as 'cyclopentadienyl' are
Strontium- and Barium-based insulators with dielectric constants
exceeding 100. A new agreement between the two companies provides
certification criteria for the chemical source materials, a license to
certain ASM ALD patents to SAFC Hitech and further development of these
chemical source materials. The new materials could be required for
production of 3x nm nodes for memory devices, beginning around 2011.
"SAFC Hitech has been working closely with ASM's research groups for some time, focusing on evaluation and process development of this class of cyclopentadienyl source materials," added Dr. Peter Heys, Research and Development Director, SAFC Hitech. "This effort has resulted in sources that have demonstrated ALD of high quality, Ultra High-k films. We are now working towards the scale-up for high volume manufacture of both strontium and barium Ultra High-k source precursors. The current target is to have product available in quantities up to and beyond 2011, consistent with ITRS road map requirements and ASM and SAFC Hitech projections."