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Lithography

News

Tool Order: ASML receives belated US$108 million Xmas present from TSMC

05 January 2012
ASML has had a great start to the New Year with several new orders placed with the lithography equipment leader that total over US$108 million. TSMC has begun 2012 with a new wave of purchase orders with leading equipment suppliers. Read more >>

Imec and ASML team on next-generation lithography for another 5 years

10 October 2011
One of the longest technology partnerships in the semiconductor industry is set to get longer after both imec and ASML agreed to extend work on both immersion and EUVL development, for a further 5 years. The agreement follows installations at imec’s 300mm R&D facility with ASML’s NXT1950i immersion tool and its NXE:3300B, the successor of ASML’s NXE:3100 preproduction tool that has been installed at imec, earlier this year. Read more >>

Tool Order: RAVE wins multi-system order for reticle haze removal

20 September 2011
A major independent device manufacturer has placed a multi-system purchase order with RAVE for its ‘Rhazer’ haze removal systems for reticles. The orders were given after an extensive in-fab evaluation of the Rhazer haze removal technology, according to RAVE. Read more >>

Product Briefings

New Product: Applied Materials new EUV reticle etch system provides nanometer-level accuracy

19 September 2011
Product Briefing Outline: Applied Materials has introduced its new ‘Applied Centura Tetra’ EUV Advanced Reticle Etch system. The new systems is claimed to overcome a major hurdle to the adoption of EUV lithography by solving the critical and unmet challenge of etching EUVL photomasks with nanometer-level accuracy and world-class defect performance to enable the fabrication of multiple new generations of high-performance semiconductor chips at the 16nm node and below. Read more >>

New Product: ASML Brion’s Tachyon MB-SRAF enables OPC-like compute times

19 September 2011
Product Briefing Outline: Brion Technologies, a division of ASML, has launched a new product for its Tachyon computational lithography platform. Tachyon MB-SRAF (Model-Based Sub-Resolution Assist Features) is said to enable the high-speed, full-chip processing of advanced chip designs with larger process windows, greater productivity, and lower development costs than rule-based alternatives. Read more >>

ASML enhances NXT:1950i immersion lithography platform

12 July 2011
Product Briefing Outline: ASML has introduced three new extensions for TWINSCAN NXT platform that improve imaging, overlay and productivity. The extensions enable chipmakers to manufacture smaller, faster chips more cost-effectively. The first NXT:1950i system shipped in 2009 and today more than 80 systems are in use by chipmakers around the world manufacturing current state-of-the-art devices at resolutions of 45- to 32-nm. Read more >>

White Papers

Lithography efficiency: a cost comparison model

21 October 2010

By Sven Grünzig, Nemotek Technologie, Rabat, Morocco

ABSTRACT
The paper presents a calculation model and conclusions with focus on the comparison of low-throughput and high-throughput lithography clusters via an analysis of the lithography Cost of Ownership (COO) and applied data of the Overall Equipment Efficiency (OEE) and Overall Factory Efficiency (OFE). The report will show that the published documents up to today are not sufficient to prove that a higher throughput necessarily leads to an advantage of the manufacturing effectiveness and that it is necessary to calculate and adapt it onto the chip manufacturer’s requirements. It will show metrics and a methodology for fab planners and equipment engineers to calculate the needed cluster throughput and to optimize the lithography efficiency. Furthermore, the calculation model presents a flexible method to identify not only the key drivers to run an efficient production, but also to easily compare different scenarios. Two examples are shown, with models evaluated with real data. This study might also be applicable to other semiconductor processing steps.

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Edition 38: The holistic route to high yields at smallest feature sizes

08 January 2009

FT38By Bernardo Kastrup, ASML, Veldhoven, The Netherlands - ABSTRACT - Feature shrink is the force that drives the semiconductor industry forward. At each step along the technology roadmap, manufacturers need to be able to produce chips efficiently, cost effectively and with high yield. As feature sizes become ever smaller, the manufacturing challenges increase almost exponentially, putting extremely tight requirements on parameters such as overlay and critical dimension uniformity (CDU). Even the tiniest process variation can have a potentially disastrous effect. In order to remedy these challenges, this paper’s proposal for a holistic manufacturing approach claims to avoid these effects by looking at all of the essential steps and processes together as a whole.

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Sources of overlay error in double patterning integration schemes

01 March 2008
David Laidler, Philippe Leray, Koen D’Havé & Shaunee Cheng, IMEC, Leuven, Belgium Read more >>