Online information source for semiconductor professionals

Anne-Marie Dutron becomes SEMI representative in France

19 May 2011 | By Mark Osborne | Going Places

Popular articles

New Product: Applied Materials new EUV reticle etch system provides nanometer-level accuracy - 19 September 2011

Oberai discusses Magma’s move into solar PV yield management space - 29 August 2008

‚??Velocity‚?? the new buzzword in Intel‚??s PQS annual awards - 12 April 2012

Applied Materials adds Jim Rogers to Board of Directors - 29 April 2008

New Product: ASML Brion‚??s Tachyon MB-SRAF enables OPC-like compute times - 19 September 2011

Dr. Anne-Marie DutronFormer semiconductor engineer, Dr. Anne-Marie Dutron has been appointed general director of the SEMI European Grenoble Office. Based in Grenoble, Anne-Marie Dutron will be representing SEMI in France and the Southern Region of Europe.

Her responsibilities will include providing some specific services in line with regional needs (networking, facilitator, collaborative projects, fundings, standardization) and to establish a strong association management including SEMI standards, public policy and member acquisition.

Anne-Marie has a Postgraduate and Doctorate in Materials Science and a Master in Technology and Innovation Management. She commenced her professional career with IBM as a process engineer before continuing her occupation with ST Microelectronics in business development, technical marketing and new technology sourcing management for wireless multimedia. Thereafter she moved to the newly formed ST-Ericsson venture as a public affairs and funding manager before setting up her own company for consulting semiconductor and related companies.

Related articles

SEMI Europe honours 3 standards committee members - 12 October 2009

SEMI Europe calls for investment to avoid mass job losses in semiconductor industry - 10 December 2008

Atmel plans 11-day fab shutdown - 16 December 2008

Technology Nodes Below 130nm: A Breakthrough in Mask Data Processing - 01 March 2002

New CoSi2 Silicidation Process for Sub-0.25 µm MOS Technologies - 01 March 1999

Reader comments

No comments yet!

Post your comment

Please enter the word you see in the image below: