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Intel and Micron tout 1.6 terabytes of NAND flash on a 300mm wafer
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IM Flash Technologies (IMFT), the joint venture NAND flash
manufacturing partnership between Intel Corp. and Micron Technology,
has produced working samples of its 34nm 32Gb multi-level cell NAND
flash device, which fits into a standard 48-lead thin small-outline
package (TSOP). The 172mm2 die produce approximately 1.6 terabytes of NAND flash memory per 300mm wafer, according to the companies.
“The introduction of 34nm process technology highlights IMFT’s rapid
progress and moves us to the forefront of NAND process technology,”
said Pete Hazen, Director of Marketing, Intel NAND Products Group.
“These advancements will expand the value proposition and accelerate
the adoption of solid-state drive (SSD) solutions in computing
platforms.”
Based
on the 34nm architecture, Intel and Micron also plan to introduce lower
density multi-level cell products including single-level cell products
by the end of this calendar year.