C. M. Osburn, A. Kingon, G. Lucovsky, J. P. Maria, V. Misra & G. Parsons,; North Carolina State University & S. A. Campbell, University of Minnesota, E. Eisenbraun, University of Albany, E. Garfunkel & T. Gustafson, Rutgers University, D. L. Kwong & J. Lee, University of Texas at Austin, T. P. Ma, Yale University, D. Schlom, Penn State University, S. Stemmer, UC Santa Barbara

ABSTRACT

Considerable progress has been made in identifying materials and processes for high k gate stacks which meet the ITRS leakage requirements. Nitrided Hafnium silicates have been shown to possess the requisite thermal stability for equivalent oxide thicknesses (EOT) below about 1 nm. Gate electrodes of TaSiN, Ru, or Ru/Ta alloys also appear to meet the stability requirements and possess appropriate work functions.