Online information source for semiconductor professionals
65-nm dry etch: the photomask future has arrived
Popular articles
Micron moving fast on Hynix in Q208 NAND flash rankings, says iSuppli - 19 August 2008
Numonyx to close California Technology Center - 12 August 2008
Qimonda starts major reorganization: exits PC DRAM market - 13 October 2008
Micron close to Inotera share purchase, says Gartner - 06 October 2008
Applied Materials sees higher CapEx spending for 2009 - 15 August 2008
Michael D. Archuletta, Chris Constantine & Dave Johnson, Unaxis Semiconductors, Florida, USA
ABSTRACT
Wafer dimensions continue to accelerate downward towards ever smaller features and the legendary Moore’s Law is still valid for current silicon devices. As wafer IC dimensions approach the physical limitations of silicon physics, the lithography techniques used to print these patterns on silicon become very difficult to perform. This article describes advances in this area down to 65-nm sizes.
 |
Please login to download the paper. No account yet? Please register. It's free! |