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Home arrow Product Briefings arrow Lithography arrow Photomask metrology for 65nm features
Photomask metrology for 65nm features Print E-mail
Oct 04, 2005 at 05:48 PM
Product Briefing Outline: Timbre Technologies, Inc., a TEL company, has released its latest version of Optical Digital Profilometry - Mask (ODP-M) metrology product, TeraGen-M 2.7. The system provides fast, accurate and non-destructive profile metrology of advanced photomasks. Problem: There is a real need in the mask marketplace for providing mask critical features like CD and etch depth measurements, accurately and reliably. Unlike CD-SEM or X-SEM technology, ODP is fast, works in an ambient environment, and doesn't require sample preparation or cleaving of the mask.

Solution: Based on Optical Scatterometry, ODP technology translates diffracted, broadband light off critical mask features into accurate profile information. In addition to measuring critical dimension (CD), TeraGen-M also provides vertical dimension measurement, such as etch depth in phase shift masks, in one single measurement. This mask metrology solution is based on Timbre Technologies, ODPtechnology, which is well established in wafer fabs for CD and profile metrology.

Applications: The technology of TeraGen-M provides both two-dimensional and three-dimensional metrology capabilities for mask applications, accurately measuring both line/spaces and contacts. In addition to Binary Chrome-on-Glass masks, the product also measures Advanced Phase shift masks, such as Alternating Attenuated Phase Shift Masks (AAPSM), Embedded Phase Shift Masks (EPSM), and Chromeless Masks. TeraGen-M provides CD and etch depth in Phase Shift and Chromeless masks in under three seconds per site.

Platform: The ODP-M solution is available in conjunction with the Atlas-M Advanced CD and Film Analysis System from Nanometrics. Inc.

Availability: October 2005 onwards
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