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SEMATECH and Synopsys start work on OPC models for high NA immersion lithography |
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Oct 04, 2005 at 05:36 PM |
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SEMATECH and
Synopsis have started a joint development program (JDP) to work on the optical
proximity correction (OPC) models required for 193nm ArF immersion lithography at
the 45nm node. The work is focused on lithography tools that will be using 1.3
NA lens system and above for 45 and 32nm production environments.
"Since
advanced immersion tools are just now being developed, modeling is critical to
determining how far we can go with immersion lithography. The Synopsys tools
have proven useful in developing the OPC models that will allow us to push the
immersion frontier," said Shane Palmer, SEMATECH senior technologist and
Texas Instruments assignee. "SEMATECH's project is geared toward preparing
tools for the next generation of immersion scanner that will use higher index
fluids, NA above 1.3 and full polarization control. The results will help
SEMATECH member companies make informed decisions about appropriate imaging tools
for advanced technology cycles."
According to the
companies, preliminary modeling results show that immersion tools using a 1.3
numerical aperture (NA) can be image-corrected for use at the 45-nm half-pitch.
The objective is to eventually enable the extension of immersion lithography to
the 32 nm half-pitch, and extend models for optical tools with numerical
aperture (NA) 1.55 and greater. The program is using Synopsys' Proteus mask
synthesis software.
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