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DRAM technology for 100 nm and beyond
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K. H. Küsters, J. Alsmeier, J. Faul, J. Lützen, & T. Zell, Infineon Technologies, Dresden, Germany
ABSTRACT
Moore’s law continues to give the direction of semiconductor development. The ITRS roadmap 2001 and 2002 [1] for silicon technology foresees the 100-nm technology node in 2003. DRAM half-pitch will develop on a 3-year cycle after 2001, with a scaling of half-pitch by a factor of 0.7 every 3 years (Figure 1). The ITRS roadmap 2001 also calls for DRAM cell size reduction by cell-design innovations after the 90-nm node.
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