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19th Edition: IBM’s SiGe BiCMOS technology roadmap |
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Apr 01, 2003 at 10:38 AM |
D. L. Harame, G. Freeman, D. Ahlgren,
J. S. Dunn, D. Greenberg, A. Joseph, J.-S., Rieh, B. Jagannathan, S. A.
St. Onge, D. Coolbaugh, V. Ramachandran, J. Johnson, P. Cottrel, R.
Singh, C. Dickey, M. Meghali, S. Subbanna, O. Schreiber & T. Tanji,
IBM
ABSTRACT
This article reviews the evolution of IBM's SiGe BiCMOS technology
roadmap. It begin with a discussion of the wireline
communications products that drive the initial high-performance target
of the roadmap: the latest advanced CMOS and highest performance (high fT and fMAX) HBT. These requirements establish the
CMOS integration approach and drive the initial SiGe HBT design.
Subsequent wireless and storage demands are focused on traditional
radio requirements: Optimization of the HBT for low noise, low
distortion and higher breakdown voltages.
These product segments
further drive the derivative technologies to more simplified states for
lower cost and faster TAT. Taking this perspective on the evolution of
the SiGe BiCMOS reveals that the roadmap for the this technology has
been developedto serve dissimilar markets with a flexible technology
backbone that provides a path to reduce cost and time to market.
 05 - IBM's SiGe BiCMOS technology roadmap
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Wafer Processing 
