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SEMATECH offers hope for 45nm low-k target |
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Sep 28, 2005 at 07:53 PM |
In a paper
presented at the Advanced Metalization Conference (AMC) at Colorado Springs,
CO, SEMATECH and Rohm and Haas Electronic Materials researchers revealed work
being carried out to provide a k-effective (keff) value of 2.5 in dual
damascene work flows targeted by the ITRS roadmap for the 45nm node.
"The dual
damascene integration that our team developed offers a potential solution for
blocking precursor penetration and minimizing process-induced damage typically
observed with ULK dielectrics containing interconnected pores," said Ward
Engbrecht, lead author and a SEMATECH copper low-k integration project
engineer.
The SEMATECH
approach deposits the dielectric films by spin-on-deposition to form a
matrix-porogen system that can be integrated as a dense material through
chemical mechanical planarization, Rohm and Haas "Solid First" ILD process. The
porogen then can be removed in a thermally-assisted ultraviolet cure process to
create a system with a keff value of approximately 2.5. The Rohm and Haas
spin-on low-k material is based on nanometer size pore forming polymers
in the methylsilsesquioxane family, which the company patented in 2001.
"Our results
show a process that has real promise as a solution for k-effective at 45 nm,"
said Sitaram Arkalgud, SEMATECH's interconnect director. "We will continue to
refine our approach with an eye to reliability and eventual high-volume
manufacturing."
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