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Integrated PVD and iALD system for 45nm |
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Sep 27, 2005 at 09:08 PM |
 Product Briefing Outline: Novellus Systems, has announced the introduction
of ‘INOVA NExT,' a 300mm metallization system for copper barrier/seed
applications at 45nm node and beyond. An extension of Novellus' INOVA
platform, the INOVA NExT features advanced physical vapor deposition
(PVD) technology, ion-induced atomic layer deposition (iALD), and a
wide array of manufacturability innovations.
Problem: INOVA NExT has been designed to improve defect
performance, serviceability, user friendliness and reduces preventive
maintenance (PM) time. The
single target Hollow Cathode Magnetron (HCM) PVD technology has been extended to the 45nm node.
Barrier non-uniformity, sidewall asymmetry, and the etch-to-deposition
ratio have all been improved, while the copper seed layer has lower
overhang and increased sidewall coverage that enable fill of 45nm
structures. These enhancements to INOVA NExT were made while
maintaining the simplicity and production-worthiness of the HCM. This
is in contrast to competing ionized PVD technologies where chambers are
significantly more
complex, leading to manufacturability issues, according to the company.
Solution: In addition to PVD chambers, the INOVA NExT platform
also enables integration of the iALD chamber. The iALD tantalum nitride
(TaN) film replaces PVD TaN
as the barrier layer for copper, providing a reduction in line
resistance due to the highly conformal and ultra-thin nature of the
film. Novellus' patented iALD TaN process
deposits a conducting film with a resistivity of less than 300
micro-Ohm-cm, in contrast to competing thermal ALD processes that
deposit an insulator, according to the company. The conducting barrier
layer is critical for ease of integration into the copper interconnect,
while demonstrating compatibility with ultra low-k (ULK) dielectrics.
The iALD process can also be used to deposit other metals, such as
ruthenium and copper, enabling an all-iALD copper barrier/seed.
Applications: Copper barrier/seed applications at 45nm node and beyond.
Platform: The INOVA platform is an advanced PVD system that
delivers highly conformal barrier and seed layers for copper
metallization. The Hollow Cathode
Magnetron (HCM) ionized source technology enables high quality Ta, TaN,
and Cu films. The copper version of INOVA NExT began shipping in Q1
2005. Aluminum and
other applications will transition to the INOVA NExT in Q4 2005.
Availability: July 2005 onwards.
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Wafer Processing 
