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Silecs develops new FEOL & BEOL dielectrics |
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Sep 21, 2005 at 01:42 PM |
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Silecs, Inc. has introduced two new products
used as advanced dielectrics for semiconductor manufacturing. These products
have been specifically designed as solutions to IC manufacturing roadblocks.
Silecs claims to use a molecular engineering approach rather than blending
techniques to design and develop its electronic materials
The first new product launched is an inorganic
spin-on oxide for advanced FEOL applications such as Shallow Trench Isolation
(STI) and Pre Metal Dielectric (PMD).
Called
ST 100 it has been designed to provide a solutions to both memory and logic IC
fabs' next generation FEOL processes that require the narrow gap fill of a
spin-on material, and the robustness of an oxide. The product has been
demonstrated to provide void-free fill of extremely narrow gaps with aspect
ratios up to 13:1, while exhibiting excellent wet etch resistance and
maintaining its integrity in process temperatures up to and above 1000 degrees
C, according to the company.
The second product launched is the SX 800 an
organosiloxane dielectric that can be used in both BEOL and FEOL applications.
It has a Young's modulus of 10.5 GPa, cracking threshold of 2 microns and
thermal stability in excess of 600 degrees C, the company claims. The SX 800
has a dielectric constant of 2.9, low leakage and high breakdown voltage, which
is intended for subtractive aluminum BEOL applications. The product is can also
used in FEOL applications due to its wet etch resistance, thermal stability and
void free fill of trench features down to 10nm.
According to the company both products were
developed in conjunction with semiconductor customers and are now available for
quantity sampling.
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