Thomas P. Moffat & Daniel Josell, Materials Science and Engineering Laboratory, National Institute of Standards and Technology, Gaithersburg, MD, USA

ABSTRACT

The continuing drive for device miniaturization calls for further improvements in metallization performance and fabrication. Substitution of certain refractory metals such as Ruthenium or Osmium for conventional Tantalum barriers offers the prospect of improved thermal and electrical performance along with process simplification by permitting seedless Cu superfilling. Close attention to the surface state of the refractory metal surface is required in order to assure successful implementation.