A. Soulet, L. Duquesne, G. Jursich & R. Inman, American Air Liquide, Chicago research Center, IL, USA, A. Misra, Air Liquide Electronics U.S. LP, Dallas, TX, USA, N. Blasco, C. Lachaud, Y. Marot, R. Prunier & M. Vautier, Air Liquide Centre de Recherches Claude Delorme,Jouy-en-Josas, France, & S. Anderson, P. Clancy & M. Havlicek, Air Liquide - Balazs™ Analytical Services, CA, USA

ABSTRACT

Selecting a precursor for gate oxide deposition requires extensive characterization of targeted molecules. In this article, we show how these characterizations help in preventing precursors' degradation, identifying gas-phase species and defining process windows and distribution parameters.