John Gumpher, Tokyo Electron America, Austin, TX, USA, Narendra Mehta & Wayne Bather, Texas Instruments, Dallas, TX, USA

ABSTRACT

This study examines the effects of hydrogen incorporation and silicon nitride film stress on boron dose retention; and indicate that increased boron retention can be achieved not only by reduction of hydrogen levels in the silicon nitride film, but also by increasing tensile film stress in the silicon nitride over-layer. 

27th Edition: Gate spacer engineering for improved boron dose retention