D.E. Joyce & P.A. Ryan, Bede, Durham, UK, & M.Wormington, Bede, Englewood, CO, USA

ABSTRACT

This article describes the use of modern X-ray diffraction equipment in the field of SiGe assessment. Strain, composition and layer thicknesses can all be measured on production wafers, i.e. nondestructively at high spatial resolution and high accuracy.