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Mark Slezak, JSR Micro, Inc., Sunnyvale, CA, USA

ABSTRACT

As critical dimensions continue to shrink, the technical challenges for 193-nm lithography continue to increase. In order for ArF lithography to support the 65-nm node and below, resist suppliers and lithographers will need to identify ways to improve resolution down to half-pitches of 70 nm as well as 70–80 nm isolated trenches and contact hole patterns. Potential line collapse, increased line edge roughness (LER), post-exposure bake (PEB) sensitivity and the need for improved etch resistance are some of the most common issues lithographers face when moving toward the line widths required for the 45-nm node.