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Rohm and Haas Electronic Materials has announced the opening on June 26th of its new $60 million immersion lithography facility in Marlborough, MA. The facility, which is fully equipped and has begun processing wafers, was established to support the company’s R&D in the area of advanced 193nm lithography materials for semiconductor applications.

The new facility has been equipped with an ASML TWINSCAN XT: 1900Gi 193nm Step and Scan system, a 300mm coat/develop track, as well as state-of-the art defect and metrology tools. Located in the company’s Advanced Technology Center (ATC) in Marlborough, the new $60 million facility is in addition to the $30 million facility, which opened in 2003.

“With the installation of the 193 nm immersion scanner and the infrastructure to process 300mm wafers, we now have the same equipment our leading-edge customers are using,” said Dr. Jim Fahey, President of Microelectronic Technologies, Rohm and Haas Electronic Materials. “This investment gives us the ability to correlate with customers and optimize our materials for their applications beyond the 45nm node.”

Pictured (left to right): Kathleen O'Connell, Associate Director of R&D, Microelectronic Technologies; Julie Planchet, General Manager, North America and Europe, Microelectronic Technologies; Yi Hyon Paik, Vice President and Business Group Director, Rohm and Haas Electronic Materials; Jim Fahey, Vice President and Business Unit Director, Microelectronic Technologies; Arthur Vigeant, President of Marlborough City Council.

Inside the new facility.

By Síle Mc Mahon