Dr. Peter Kuschnerus, E-Beam Mask Repair Systems, LEO Electron Microscopy Group

ABSTRACT

The quality of photo masks used in chip fabrication is a key factor determining the quality and yield achieved in wafer fabs. In order to achieve reduced feature sizes and to enhance integration depth, shorter wavelengths, i.e. 193nm and 157nm are used. Furthermore, advanced and complex enhancement techniques like optical proximity correction (OPC) features or phase-shift masks (PSM) are necessary. This results in challenging needs for advanced mask repair, in new materials, higher accuracies and precision and higher demands to VUV transmission.