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Qimonda AG and Elpida Memory have signed a Memorandum of Understanding to develop DRAM cell sizes using both Qimonda’s Buried Wordline technology and Elpida’s advanced stack capacitor technology for the 40nm node and below. The compnaies are targeting 4F² cell concept by 2010 and aim to scale it to the 30nm generation.

“This strategic cooperation with Elpida is a tremendous endorsement of our innovative Buried Wordline technology,” said Kin Wah Loh, President and CEO of Qimonda AG. “Qimonda will leverage this partnership to significantly accelerate the introduction of small 4F² cell sizes. This technology alignment of two major DRAM innovators creates excellent opportunities for greater economies of scale in R&D and future joint manufacturing activities.”

Yukio Sakamoto, President and CEO of Elpida, said, “Our R&D effort has given us the lead in DRAM technology. In the tough, competitive industry that we are in, however, faster and more efficient development of new process technologies is becoming critically important. We believe this joint development agreement with Qimonda will further accelerate and strengthen our technology leadership, putting us on a path to the top position in the DRAM market.”

The companies also said they would explore joint development opportunities in the areas of Through Silicon Via Technology and future memories.