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Home arrow Lithography arrow News arrow Lithography arrow Model-based mask verification used to optimize 45nm RET and OPC str...
Model-based mask verification used to optimize 45nm RET and OPC strategies Print E-mail
Apr 17, 2008 at 03:49 PM

ImageBrion Technologies has said that work conducted by STMicroelectronics at its Crolles2 facility with photomask partner Dai Nippon Printing shows the effectiveness of using model-based mask verification with 45nm masks for logic applications due to its ability to assist in the optimization of RET and OPC strategies, which are increasing in complexity and cost at each technology node. 

“Model-based photomask verification is helping us to optimize our mask verification, and our RET and OPC strategies. We look forward to continuing this valuable collaboration,” said Joël Hartmann, Silicon Technology Development Director for STMicroelectronics, in Crolles, France.

“We are pleased that our collaboration with Brion is providing valuable support to advanced IC makers such as STMicroelectronics,” said Naoya Hayashi, Research Fellow at DNP. “This joint initiative helps us to pursue our mission of continual quality improvement and producing increasingly accurate photomasks.”

“Photomasks are an integral part of the lithographic process, and we’re working to incorporate mask-aware modeling into our solutions,” said Jim Koonmen, General Manager of Brion. “We appreciate the opportunity to pursue this important work with outstanding partners such as DNP and STMicroelectronics.” Brion and DNP have been working together since 2006 to apply Brion’s technology to photomask production.

The development work will be described in a paper presented at the Photomask Japan conference in Yokohama, being held this week.
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