IBM process partners test 32nm high-k metal gate technology - Fabtech - The online information source for semiconductor professionals

Core Sections

Wafer Processing

Lithography

Fab management

This Site
Engineering Web

Username: Password: Password Reminder No account? Register

Home

News

Wafer Processing

IBM process partners test 32nm high-k metal gate technology

Apr 14, 2008 at 05:41 PM

IBM’s joint development partners that include Chartered Semiconductor, Freescale, Infineon, Samsung, STMicroelectronics and Toshiba Corporation - but not AMD in this case - have touted performance and low-power consumption results from 32nm high-k/metal gate (HKMG) test chips produced at IBM's East Fishkill, N.Y. 300mm fab.

IBM said that its alliance partners have all seen performance improvements on 32nm technology circuits of up to 35 percent over 45nm technology circuits at the same operating voltage. Power reductions of between 30 and 50 percent were also demonstrated.

“These early high-k/metal gate results demonstrate that by working together we can deliver leading-edge technologies that handily surpass others in the industry,” said Gary Patton, Vice President for IBM's Semiconductor Research and Development Center on behalf of the technology alliance. "Demonstrating this caliber of result in a practical environment means that as our collective client base moves to next-generation technology by using the 'gate-first' approach, they will continue to maintain a significant competitive advantage.”

Readers' comments

Comment by GUEST on 2008-05-19 09:16:51
http://www.fabtech.org/content/view/6339/ tell other :)

Comment by GUEST on 2008-04-18 11:34:31
Still way behind Intel. Intel announced their 32nm breakthrough last year. (http://www.intel.com/pressroom/archive/releases/20070918corp_a.htm?iid=tech_arch_32nm+body_pressrelease). Of course Intel has been doing High-K Metal gates for the last 2 to 3 years already (http://download.intel.com/intel/finance/presentations/pdf_files/bohr45nm.pdf). They never anounce real breakthroughs until they have already proven them manufacturable and ready for high volume production. IBM and AMD have great R&D groups that have proven track records of innovation, but Intel continues to beat the competition with their quick innovation-to-market (at high volume) approach, and I don't see anyone catching up to them in the near future.

Bookmark with:
Delicious	Digg	reddit	Facebook	StumbleUpon

Visit Fabtech Jobs website

Subscribe to Fabtech weekly newsletter

IMEC reduces high-k/metal gate process steps from 15 to 9 (17/06/2008)

Common Platform alliance partners start 32nm HKMG shuttles in 3Q08 (14/04/2008)

Toshiba joins IBM Alliance on 32nm bulk CMOS process development (18/12/2007)

IBM alliance members to have 32nm high-k/metal gate process in 2H09 (10/12/2007)

IBM process partners agree to 32nm R&D (23/05/2007)

Related jobs

R&D Manager (, 08/04/2008)

Ingenieur Conception analogique/mixte Power Management (Toulouse, 19/02/2008)

Technical Support Engineer III (Santa Clara, 10/11/2007)

Research Scientist (Milpitas, 15/09/2007)

Electrical Design Engineer (San Jose, 01/09/2007)