Iris Mäge & Uwe Seifert, Qimonda AG, Dresden; Barry Saville & Martin Tuckermann, KLA-Tencor GmbH, Dresden

ABSTRACT

With the introduction of sub-100nm design rules, and especially 193nm photolithography, the development of new monitoring strategies is becoming increasingly important and necessary as new materials, new tools and new process challenges are introduced. Micro after-develop inspection (µADI) is a big step forward for photolithography defect monitoring as well as for integrated process learning.