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Vistec Semiconductor highlights EUV mask registration metrology results |
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Mar 12, 2008 at 04:34 PM |
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 In cooperation with a leading Japanese EUV mask supplier, Vistec Semiconductor noted at the recent European Mask and Lithography Conference (EMLC) in Dresden, Germany, that it published new registration metrology results on EUV masks using its LMS IPRO4. The results showed that measurement repeatability on EUV masks proved to be better than 0.8nm and accuracy was below 1.6nm (3 sigma) over the entire active array of 100 x 128mm.
“The performance achieved is considered to be perfectly suited to characterize sample R&D masks for EUV lithography,” explained Klaus-Dieter Roeth, Vistec’s Senior Product Manager for Mask Metrology.
The company also claimed that all installed LMS IPRO4 systems have demonstrated performance levels exceeding all system specifications by at least 25 – 30 percent.
“We are very pleased with the metrology efficiency of the LMS IPRO4 that is deeply rooted in Vistec’s many years of expert knowledge in system integration of mask metrology equipment and its future-oriented design. Our next generation tool, the Vistec LMS IPRO5, currently under development, will further enhance EUV-capabilities, and specifically address double patterning requirements. It will be launched next year,” commented General Manager Gerhard Ruppik.
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