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IBM & Rohm and Haas sign JDA on copper/low-k CMP through 22nm node
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IBM and Rohm and Haas Electronic Materials are to collaborate on CMP
process development for copper and low-k dielectrics integration at the
32nm and 22nm nodes. Under a signed joint development agreement (JDA)
the companies will create a complete CMP consumables solution to enable
volume manufacturing. The news comes on the back of an announcement that the two companies would also collaborate on photoresist and implant steps at the same technology nodes.
“As the complexity of the technology increases, innovations in pad
and slurry technologies are essential for successful manufacturing,”
said Dr. Jeffrey Hedrick, Senior Manager Semiconductor Process
Technology at IBM Research. “Combining Rohm and Haas's world renowned
consumables expertise with IBM's extensive knowledge of CMP process
technology will help address future CMP technology challenges.”
“The
development of CMP consumables for advanced technology nodes is
becoming extremely complicated,” explained Cathie Markham, Chief
Technology Officer for Rohm and Haas Electronic Materials. “Successful
CMP process development for the 32nm and 22nm nodes requires a complete
understanding of the interaction between pad, slurry and conditioner
under various process conditions.
The research will be
undertaken at IBM's Research facility in Yorktown Heights, NY, as well
as the UAlbany NanoCollege’s Albany NanoTech Complex and Rohm and
Haas’s Technology Centers in Newark, DE and Phoenix, AZ.