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New Product: Axcelis’ Optima XE offers 10keV to 4MeV energy range for widest application range
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Product Briefing Outline: Axcelis Technologies has
launched the Optima XE high-energy ion implanter, the final component
of Axcelis’ Optima single wafer suite of tools, which provides a
complete range of energy levels from 10keV to 4MeV. In particular, the
Optima XE is designed to provide a broad energy range to perform all
isolation and retrograde well implants for advanced devices. With its
new single wafer endstation, it can also perform medium current
implants.
Problem: As advanced technologies evolve, device
manufacturers require tighter control of beam-to-wafer incident angle
and overall contamination. In manufacturing, ion implanters carry a
high Cost of Ownership, requiring next-generation tools to have greater
productivity at lower cost due to IC device pricing pressures. Fabs
cannot afford to absorb unplanned downtime, and must achieve high
equipment utilization.
Solution: The Optima
XE uses Axcelis' production-proven RF Linac high-energy spot beam
technology, ensuring that all points across the wafer see the same beam
at the same angle, resulting in improved process control and yields. To
meet CoO targets, the system has a throughput of up to 400 wafers/hour,
which is due in part to its claim of having the widest single-charge
operating range. Optima XE also combines Axcelis' RF Linac high-energy
spot beam technology with a high-speed, state-of-the-art single wafer
endstation capable of significantly improved throughput. The industry’s
increasing reliance on foundry production requires foundry fabs to be
more flexible to accommodate a larger mix of products. The Optima XE
provides extraordinary flexibility, covering a wide range of energy
levels from 10keV to 4MeV.
Applications: High-energy
applications that include isolation and retrograde well implants for
DRAM, NAND and NOR FLASH, embedded memory and logic device
manufacturing.
Platform: The Optima XE
combines Axcelis’ production-proven RF Linac high-energy spot beam
technology with a high-speed, state-of-the-art single wafer endstation.
Availability: January 2008 onwards.
