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Home arrow News arrow Lithography arrow SEMATECH demonstrates defect density of 0.04/cm2 for EUV mask blanks
SEMATECH demonstrates defect density of 0.04/cm2 for EUV mask blanks Print E-mail
Feb 11, 2008 at 03:28 PM

ImageSEMATECH has said that its has surpassed the consortium’s published commercial EUV mask blank roadmap target for the end of 2007 with results showing a best defect density of 0.04/cm2 with only 8 defects combined from the substrate and the multilayer, which is formed from as many a 80 reflector layers. 

“The success of the partnership between SEMATECH and the UAlbany NanoCollege is further illustrated by the latest breakthroughs made by SEMATECH researchers and engineers working at CNSE’s Albany NanoTech Complex,” said Dr. James G. Ryan, Professor of Nanoscience and Associate Vice President of technology at CNSE.

SEMATECH established the Mask Blank Development Center in Albany in 2003. 

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