Home
News
Blogs
Fabtech Jobs
Product Briefings
Going Places
300mm Activity Reports
Core Sections
Wafer Processing
Lithography
Fab management
Materials & Gases
Critical Components
Cleanroom
EHS
 
Find

GlobalSpec - The Engineering Search Engine
 
Home arrow Lithography arrow Articles arrow Edition 20 - Published November 2003 arrow 20th Edition: 65-nm dry etch: the phot...
20th Edition: 65-nm dry etch: the photomask future has arrived Print E-mail
Jan 17, 2008 at 10:53 AM

Michael D. Archuletta, Chris Constantine & Dave Johnson, Unaxis Semiconductors, Florida, USA

ABSTRACT

Wafer dimensions continue to accelerate downward towards ever smaller features and the legendary Moore’s Law is still valid for current silicon devices. As wafer IC dimensions approach the physical limitations of silicon physics, the lithography techniques used to print these patterns on silicon become very difficult to perform. This article describes advances in this area down to 65-nm sizes.

20th Edition: 65-nm dry etch: the photomask future has arrived
Readers' comments



Bookmark with:
DeliciousDiggredditStumbleUpon

Visit Fabtech Jobs websiteSubscribe to Fabtech weekly newsletter

Related articles
20th Edition: Immersion lithography heads for the rapids  (01/11/2003)
20th Edition: Confronting the low-k challenge: if it does not improve RC, why bother?  (31/10/2003)
20th Edition: Ramping up to DFM: design for manufacture  (18/10/2003)
20th Edition: Equipment Lifecycle Management  (18/10/2003)
20th Edition: Contamination-free liquid-flow controller  (18/10/2003)

Related jobs
Senior Etch Process Engineer  (Wales, 19/03/2008)
Thin Films Process Engineer  (Phoenix, 21/01/2008)
Staff Process Engineer  (Portland, 22/11/2007)
Etch Development Engineer  (Portland, 22/11/2007)
E Beam Site Engineer  (San Jose, 10/08/2007)
Subscribe
300mm