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Home arrow Lithography arrow Articles arrow Edition 17 - Published August 2002 arrow 17th Edition: Spectroscopic Ellipsometry...
17th Edition: Spectroscopic Ellipsometry (SE) for materials characterization at 193 and 157nm Print E-mail
Sep 10, 2002 at 10:01 AM

J. N. Hilfiker, J.A.Woollam Co., Inc. Lincoln, NE, USA; F. G. Celii, W. D. Kim, E. A. Joseph, C. Gross, T. Y. Tsui, R. B.Willecke & J. L. Large, Texas Instruments, Dallas, TX, USA; D. A. Miller, International SEMATECH, Austin, TX, USA

ABSTRACT

New SE tools measuring into the vacuum ultraviolet (VUV) allow accurate thin film metrology at193 and 157nm. This article reviews characterization of photoresist, anti-reflection, and hardmask candidate coatings using SE. Optical characterization of these layers allows simulation and optimization of the lithography process. 

17th Edition: Spectroscopic Ellipsometry (SE) for materials characterization at 193 and 157nm
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