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Spectroscopic Ellipsometry (SE) for materials characterization at 193 and 157nm

01 September 2002 | By Mark Osborne | White Papers > Edition 17, Lithography

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J. N. Hilfiker, J.A.Woollam Co., Inc. Lincoln, NE, USA. F. G. Celii,W. D. Kim, E. A. Joseph, C. Gross, T. Y. Tsui, R. B.Willecke & J. L. Large, Texas Instruments, Dallas, TX, USA. D. A. Miller, International SEMATECH, Austin, TX, USA

ABSTRACT

New SE tools measuring into the vacuum ultraviolet (VUV) allow accurate thin film metrology at 193 and 157nm. This article reviews characterization of photoresist, anti-reflection, and hardmask candidate coatings using SE. Optical characterization of these layers allows simulation and optimization of the lithography process.

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