Ken Monnig, International SEMATECH, Austin, TX, USA
ABSTRACT
The introduction of copper metallization into semiconductor manufacturing has generated a series of challenging issues. The multiple steps required in dual damascene processing can impact the successful fabrication, electrical performance, and reliable use of the copper metallization. Additionally, emerging and anticipated low-k materials offer little support for metallization during the rigors of fabrication. The move to copper with the closely following move to low-k interlayer dielectric is forcing the industry to invent new solutions at a rate about two to three times faster than before.