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Home arrow Product Briefings arrow Featured arrow New Product: Applied Materials’ ‘SEMVision’ G4 offers one defect-per-secon...
New Product: Applied Materials’ ‘SEMVision’ G4 offers one defect-per-second review rate Print E-mail
Dec 05, 2007 at 05:22 PM

ImageProduct Briefing Outline: Applied Materials, Inc. today unveiled its most advanced defect review SEM, the Applied ‘SEMVision’ G4, which extends the technology and productivity of Applied's SEMVision system to 45nm-and-beyond applications. Key to the SEMVision G4 are its new SEM column technology and enhanced multi-perspective SEM imaging system (MPSI) that deliver 2nm physical resolution at a benchmark one-defect-per-second review rate. 

Problem: Full defect characterization is required in order to identify the root cause effectively. The SEMVision is capable of automatically classifying a broad range of process defects faster than manual systems that are inherently found in labs rather than in a production environment that requires faster access to defects and root cause analysis.

Solution: The SEMVision G4 brings several advanced defect monitoring capabilities from the engineering floor to in-line volume manufacturing. The tool can rapidly analyze and classify defects as small as 30nm in the most sensitive device layers, such as immersion photoresist and low-k dielectrics. Featuring EDXtreme, SEMVision G4 extends the chemical characterization of defects to sub-50nm particle sizes. The system's new SEM column can rotate and tilt up to 45° relative to the wafer to provide complete 3-D data for superior defect visualization and classification.

Applications: EDXtreme enables the extension of chemical characterization of defects to sub-50nm particle. The rotate and tilt feature of the SEM column up to 45° relative to the wafer provides complete 3-D data. Advanced applications include 3-D defect analysis on the beveled edge of the wafer.

Platform: The system features a broad range of imaging modes; MPSI with 5 detectors; voltage contrast and high aspect ratio imaging; and proprietary secondary electron spectrometer.

Availability: December 2007 onwards.

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